| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| TDA8920C09 TDA8920C TDA8920CJ TDA8920CTH TDA8920CJ |
2 垄楼 110 W class-D power amplifier
2 麓 110 W class-D power amplifier
2 ′ 110 W class-D power amplifier
2 x 110 W class-D power amplifer, SOT411-1 (DBS23P), Tube 110 W, 2 CHANNEL, AUDIO AMPLIFIER, PZFM23
2 X 110 W class-D power amplifier
2 ′ 110 W class-D power amplifier
2 X 110 W class-D power amplifier
|
NXP Semiconductors N.V.
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| TDA8920 TDA8920J TDA8920TH |
2x50 W class-D power amplifier(2x50W D绫诲???????澶у?)
2 x 50 W class-D power amplifier 80 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO24
2 x 50 W class-D power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC479306 2SC4793-06 2SC4793FM 2SC4793M |
Power Amplifier Applications Driver Stage Amplifier Applications
Silicon NPN Epitaxial Type Power Amplifier Applications
|
Toshiba Semiconductor
|
| BA5204F A5801031 |
Audio LSIs > Power amplifier
3V / 35mW dual power amplifier
From old datasheet system
|
ROHM[Rohm]
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
| 2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管（功率放大器，放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| STK401-020 STK401-140 STK401-010 STK401-340 STK400 |
2ch AF Power Amplifier (Split Power Supply) 30W 30 W, THD = 0.08%
AF Power Amplifier (Split Power Supply) (50 W 50 W 50W min THD = 0.08%)
3ch AF Power Amplifier (Split Power Supply) (25 W 25 W 25 W THD = 0.4%)
AF Power Amplifier (Split Power Supply) (15 W 15 W min THD = 0.4%)
|
SANYO[Sanyo Semicon Device]
|
